Silicon Carbide and Related Materials 2013

ISBN: 9783038350101 出版年：2014 页码：1,248 Trans Tech Publications Ltd

The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (sic) and related materials, and a wide range of topics from crystal growth to their power electronics applications. in these proceedings, the written version of 270 contributed papers and 13 invited papers are included. the major chapters of the proceedings collect papers in the area of bulk growth of sic, epitaxial growth of sic, physical properties and characterization, processing, devices and application. there are three shorter chapters on graphene, iii-nitrides and related materials. the 283 papers are grouped as follows: chapter 1: sic bulk growth; chapter 2: sic epitaxial growth; chapter 3: physical properties and characterization of sic; chapter 4: processing of sic; chapter 5: devices and circuits; chapter 6: related materials.