Defects and Diffusion in Semiconductors XII

ISBN: 9783908451877 出版年:2010 页码:352 Trans Tech Publications Ltd

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This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of annual retrospective XI (volume 282). As well as the 565 semiconductor-related abstracts, the issue includes 鈥?in line with the policy of including original papers on all of the major material groups: 鈥淪tudy of conduction mechanism in amorphous se85-xte15bix thin films鈥?(a.Sharma and p.B.Barman), 鈥淪tructure and optical properties of magnetron-sputtered siox layers with silicon nanoparticles鈥?(l.Khomenkova, n.Korsunska, t.Stara, y.Goldstein, j.Jedrzejewski, e.Savir, c.Sada and y.Emirov), 鈥淣on-gaussian diffusion of phosphorus and arsenic in silicon with local density diffusivity model鈥?(f.Wirbeleit), 鈥淎rtificial aging behavior of 6063 alloy studied using vickers hardness and positron annihilation lifetime techniques鈥?(m.A.Abdel-rahman, a.El-deen a.El-nahhas, y.A.Lotfy and e.A.Badawi), 鈥淎nalysis of the solid solution microstructure of (HF) al-zn alloys鈥?(h.Bedboudi, a.Bourbia, m.Draissiaa, s.Boulkhessaim and m.Y.Debili), 鈥淟iquid-phase sintering of tungsten heavy alloys鈥?(s.F.Moustafa, s.H.Kaitbay and g.M.

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