Silicon Carbide and Related Materials 2009

ISBN: 9780878492794 出版年：2010 页码：1,277 Trans Tech Publications Ltd

These Proceedings reflect the present knowledge and industrial experience concerning the growth of bulk crystals and epitaxial layers, the physical properties of grown semiconductors as well as advances made in the processing and fabrication of SiC high-power devices. The technical program consisted of 331 contributed, and 28 invited, papers. It was noted that because micropipes could now be almost completely suppressed in SiC wafers, extended defects such as dislocations or stacking faults had become the target as sources of degradation of device performance. The development and fabrication of high-power devices and systems for industrial applications was also a hot topic. Another extremely exciting topic was that of graphene grown onto SiC. Two plenary sessions presented a survey of the basic physical properties and processing of SiC and of the industrial potential of components based upon SiC; being highlights of the conference.