Materials for Electronics: Silicon Carbide and Related Materials

ISBN: 9783035716429 出版年：2020 页码：180 Min Lu Trans Tech Publications Ltd

The growth pits formed during 5-10 μm 4H-SiC epitaxial growth by a home-built vertical hot-wall CVD reactor are investigated and their formation mechanisms are discussed. The origin of the growth pits is believed to be the silicon droplets related to the unoptimized growth condition. The growth pits are successfully removed by adding more HCl to the in-situ etching stage and the after-growth cooling stage.