Nano-CMOS Gate Dielectric Engineering

ISBN: 9781439849590 出版年：2017 页码：249 Wong, Hei CRC Press

Overview of CMOS Technology Introduction MOS Transistor: A Quick Introduction to Classical Models Short-Channel Effects and Short-Channel Modifications Features and Uniqueness of MOS Transistor MOS in Deca-Nanometer Technology Trends and Options Summary References High-k Dielectrics The High-k Candidates Electronic Structure of Transition Metals and Rare Earth Metals Material Properties of Elemental Transition Metal and Rare Metal Oxides Bandgap and Band Offset Energies Bond Ionicity and Dielectric Constant Carrier Effective Masses Thermal Stability Disorders and Defects Summary References Complex Forms of High-k Oxides Introduction Silicates and Aluminates Pseudo-Binary Alloys Stoichiometric Binary Alloys Doping Thermal Stability and Phase Separation Summary References Dielectric Interfaces Introduction High-k/Silicon Interface High-k/Metal Interface Summary References Impacts on Device Operation Introduction Gate Leakage Current Threshold Voltage Control and Fermi-Level Pinning Channel Mobility Subthreshold Characteristics Dielectric Breakdown Hot-Carrier Effects Temperature Instabilities Summary References Fabrication Issues Process Integration Atomic Layer Deposition Metal Organic Chemical Vapor Deposition Physical Vapor Deposition Etching Summary References Conclusions Appendix A: Fundamental Physical Constants and Unit Conversions Appendix B: Properties of Si and SiO2 Index