Nano-Semiconductors —— Devices and Technology

----- 纳米半导体：设备和技术

ISBN: 9781439848357 出版年：2018 页码：600 CRC Press

Section I: Semiconductor Materials Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models, A. Maffucci, A.G. Chiariello, C. Forestiere, and G. Miano Monolithic Integration of Carbon Nanotubes and CMOS, H. Xie Facile, Scalable, and Ambient-Electrochemical Route for Titania Memristor Fabrication, S. Chaudhary and N.M. Neihart Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years, K.M. Alam and S. Pramanik Section II: Silicon Devices and Technology SiGe BiCMOS Technology and Devices, M. Racanelli and E. Preisler Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm, A. Afzalian Development of 3D Chip Integration Technology, K. Sakuma Embedded Spin-Transfer-Torque MRAM, K. Lee Nonvolatile Memory Device: Resistive Random Access Memory, P. Zhou, L. Chen, H. Lv, H. Wan, and Q. Sun DRAM Technology, M.J. Lee Monocrystalline Silicon Solar Cell Optimization and Modeling, J. Huang and V. Moroz Radiation Effects on Silicon Devices, M. Bagatin, S. Gerardin, and A. Paccagnella Section III: Compound Semiconductor Devices and Technology GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology, S.-C. Shen, J.-H. Ryou, and R.D. Dupuis GaN HEMTs Technology and Applications, G.I. Ng and S. Arulkumaran Surface Treatment, Fabrication, and Performances of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors, C.-T. Lee GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices, F. Medjdoub GaAs HBT and Power Amplifier Design for Handset Terminals, K. Yamamoto Resonant Tunneling and Negative Differential Resistance in III-Nitrides, V. Litvinov New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors, P.K. Kandaswamy and E. Monroy