----- 间隔设计的FinFET结构:高效能数字电路应用
This book focusses on the spacer engineering aspects of novel MOS-based device circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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