----- 纳米-CMOS 可制造性设计:技术节点用稳健电路与物理设计
This book is the sequel to Nano-CMOS Circuit and Physical Design, taking design to technology nodes beyond 65nm geometries. It examines the challenges that design engineers face in the nano-scaled era, such as exacerbated effects and the proven design for manufacturability (DFM) methodology in the midst of increasing variability and design process interactions. It also tackles complex issues in the design process and introduces several emerging concepts, including stress proximity effects, contour-based extraction, and design process interactions.
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